EpiCurve® TT

Combine wafer curvature measurements with emissivity-corrected pyrometry and growth rate/thickness measurements by three-wavelength reflectance.

Product info Features Related products

To overcome the challenges that occur with larger wafers (4", 6", 8" ore more), you need the advanced EpiCurve® TT system. It combines wafer curvature measurements with all the features of the EpiTT: emissivity-corrected pyro­metry and growth rate/thickness measurements by three-wavelength reflectance.

This tool will help to avoid cracks, achieve flat wafers and control temperature homogeneity*. Every curvature tool can be equipped with advanced resolution (AR) curva­ture measurements for wafer bow asphericity control (EpiCurve® TT AR).

*depending on the viewport size

  • GaN LED and laser diode production

  • GaN power devices

  • GaAs/AlGaInP/InP laser diode production

  • Multi-junction solar cell production on GaAs, Ge, Si

  • SiC for power electronics

  • R&D for new materials and devices

Curvature:

  • Wafer-selective curvature measurements in the curvature range from -7000 km-1 (convex) to +800 km-1 (concave)

  • Versions with a blue laser provide measurements on double-sided polished and patterned substrates

  • Aspherical bowing curvature measurements with an advanced resolution (AR) option 

Emissivity Corrected Pyrometry:

  • Temperature range: T = 450°C to 1300°C for large viewport systems/T = 500°C to 1400°C for narrow viewport systems/other temperature ranges on request, e.g., 1500°C for UV LED applications, 1700°C for SiC

  • Accuracy better than 1 K

  • Wafer and area selective measurements

  • True wafer temperature for opaque semiconductors such as InP, GaAs and Si

  • Pocket temperature for GaN, Sapphire and SiC

Reflectance at three wavelengths:

  • 950 nm, 633 nm and 405 nm

  • Growth rate, layer thickness, roughness and other layer qualities

  • Full performance up to 1500 rpm main susceptor rotation!

  • Further wavelength (e.g. 280nm, 365nm, 1550nm) for special applications are available on request

Name Size
EpiTT VCSEL and EpiCurveTT VCSEL data sheet 2.28 MB
2D materials application note 1.58 MB
AbsoluT for EpiTT & EpiCurve®TT data sheet 1.44 MB
EpiCurve® TT data sheet 1.37 MB
Office license and central database white paper 621.51 KB
In-situ characterization of 2D materials growth 2.48 MB
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Features

EpiTT InspiRe

LayTec has customized and expanded EpiTT's perfor­mance for VCSEL epi­taxy: The EpiTT InspiRe combines spectral reflectance measurements with the robust and industry proven EpiTT performance. EpiTT InspiRe contains two fiber optical heads: one for a standard EpiTT and one for spectral reflectance sensing

Multiple head configuration:

LayTec offers combinations of EpiCurve® TT with the products of the EpiTT family: EpiCurve®Twin TT has a total of two EpiTT heads and EpiCurve®Triple TT has three EpiTT optical heads to measure temperature and reflectance at independent positions.

Combination with Pyro 400

When it comes to bowed IR transparent substrates like sapphire or SiC, a conventional infrared (IR) pyrometer can measure only the pocket temperature. LayTec's Pyro 400 directly measures surface temperature of GaN on sapphire and of SiC and enables direct temperature control of InGaN MQW layers. Also for GaN on Si, Pyro 400 facilitates GaN temperature measurements due to increased UV absorption. The combination of Pyro 400 and EpiCurve® TT will provide you with all real-time growth parameters and the best monitoring of quantum well growth in blue and green LEDs and laser diodes.

Temperature calibration

For precise temperature measurements throughout the whole fab, we offer the unique temperature calibration tool AbsoluT. It will help you set up the same absolute temperature reference point for pyrometry measurements on different rings and in different reactors and runs.

EpiNet® software

All LayTec in-situ systems are equipped with LayTec software specially developed for process optimization, analysis and control. Our software solutions can be integrated into the whole fab to monitor all runs simultaneously and support operators making “stop or go” decisions.

EpiCurve® TT for MOCVD

Each product in the EpiCurve® TT family is available for all MOCVD growth systems, such as systems with satellite rotation, showerhead-like systems, R&D type and customized MOCVD growth systems and others. For details please download the EpiCurve® TT datasheet.

High resolution wafer bow for CCS reactors

High resolution wafer bow for CCS reactors

Detecting thin-film strain in-situ during epi growth through the tiny openings of the showerhead view-ports is a challenge. However, with our advanced software algorithms, in-situ strain balancing or AlGaN lattice constant tuning is now possible with accuracy levels formerly known only for ex-situ XRD methods.

From the archives: In-situ metrology in action at FBH Berlin

Head over to our YouTube channel to see LayTec's in-situ metrology live! The video was taken way back in 2010 at a customer site. In a short lab tour at FBH Berlin in Germany you can see how EpiCurve® TT and EpiRAS TT monitor LED and laser growth and help optimize the processes.

Contact

We look forward to hearing from you and will try to answer your questions or respond to your message as best we can. Please use one of the following contact options.

infolaytec.de +49 30 8900550