Pyro 400
Our dedicated solution for GaN-based epitaxy on transparent substrates as well as on silicon.
LayTec offers a sophisticated solution ideally suited for GaN-based epitaxy: the Pyro 400 metrology system. It provides precise real surface temperature measurements during epitaxial growth of GaN on sapphire or SiC and enables direct growth control of InGaN multiple quantum well (MQW) layers. While conventional pyrometers measure pocket temperature instead of wafer temperature, Pyro 400 provides both ultraviolet (UV) pyrometry for direct GaN surface temperature control.
GaN LED and laser diode production
III-Nitride growth on sapphire
SiC growth
R&D for new materials and devices and many others
Ultraviolet (UV) pyrometry for direct GaN surface temperature control
Strict LED emission wavelength uniformity control
Automated correction of viewport coating effects to enable long-lasting, 24/7 accuracy in HB-LED emission wavelength.
Features
Combination with EpiCurve® TT
The combination of Pyro 400 and EpiCurve® TT provides you with all real-time growth parameters and the best control of LED growth in MOCVD.
EpiNet® software
All LayTec in-situ systems are equipped with LayTec software specially developed for process optimization, analysis and control. Our software solutions can control several systems in an MOCVD fab, monitoring all runs simultaneously and supporting operators when making “stop or go” decisions based on advanced process control (APC).
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