EpiTT

Combine measurements of temperature and
reflectance at three wavelengths in one tool.

Product info Features Related products

EpiTT combines measurements of temperature and reflec­tance at three wave­lengths in one tool. For True Tempera­ture (TT), we apply the method of emissivity corrected pyrometry, which delivers the precise surface tempera­tures of opa­que mate­rials at 950 nm (Si, GaAs, InP). For materials that are transparent at 950 nm (GaN, Sapphire, SiC), EpiTT measures the temperature on the top side of the carrier.

Measuring reflectance at three wavelengths monitors all essential properties of the growing layers, such as growth rate, film thickness, stoichiometry changes and morpho­logy. 

EpiTT offers industry standard metrology for all kinds of epitaxial growth systems and is compatible with different main rotation frequencies in the range from 5-1500 rpm.

  • Temperature range: T=450°C to 1300°C for large viewport systems/T=500°C to 1400°C for narrow viewport systems/other temperature ranges on request, e.g. 1500°C for UV LED applications, 1700°C for SiC

  • Wafer temperature with precision better than ±1K in a range of 600°C to 1400°C

  • Wafer and area selective measurements

  • True wafer temperature for opaque semiconductors such as InP, GaAs and Si

  • Pocket temperature for GaN, Sapphire and SiC

Emissivity corrected pyrometry:

  • Temperature range from 450°C to 1300°C for large viewport systems/500°C to 1400°C for narrow viewport systems / other temperature ranges on request, e.g. 1500°C for UV LED applications, 1700°C for SiC

  • Accuracy better than 1 K

  • Wafer and area selective measurements

  • True wafer temperature for opaque semiconductors such as InP, Graphite (SbS)

  • Pocket temperature for GaN, Sapphire and SiC

Reflectance at three wavelengths:

  • 950 nm, 633 nm and 405 nm

  • Growth rate, layer thickness, roughness and other layer qualities

  • Full performance up to 1500 rpm main susceptor rotation

  • Further wavelength (e.g. 280nm, 365nm, 1550nm) for special applications are available on request

Name Size
EpiTT data sheet 1.01 MB
EpiTT VCSEL and EpiCurveTT VCSEL data sheet 2.28 MB
AbsoluT for EpiTT & EpiCurve®TT data sheet 1.44 MB
Office license and central database white paper 621.51 KB
In-situ characterization of 2D materials growth 2.48 MB
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Features

EpiTT InspiRe

LayTec has customized and expanded EpiTT's perfor­mance for VCSEL epi­taxy: The EpiTT InspiRe combines spectral reflectance measurements with the robust and industry proven EpiTT performance. EpiTT InspiRe contains two fiber optical heads: one for a standard EpiTT and one for spectral reflectance sensing

Multi-head tools

LayTec offers multi-head configurations of tools in the EpiTT family, which are specifically designed for multiple wafer ring reactors. These models have two (EpiTwin TT) or three (EpiTriple TT) optical heads for taking tempera­ture and reflectance measurements at indepen­dent positions. Nearly all the LayTec EpiTTs can be upgraded to multi-head systems.

EpiTT features in other tools

Both emissivity-corrected temperature monitoring and reflectance measurement at three wavelengths are included in all products in our EpiCurve® TT family of products. For reactors with multiple wafer ring configu­rations, the models with two or three EpiTT heads (EpiCurve®Twin TT and EpiCurve®Triple TT) allow for tem­perature and reflectance measure­ments at two or three independent positions respectively.

Temperature calibration

For our systems that contain an EpiTT optical head, we offer a unique tempe­rature calibration tool AbsoluT. This small, handheld device sets up exactly the same abso­lute temperature reference point for pyrometry measure­ments on each EpiTT head, on different rings and in different reactors and runs, enabling excellent pring-to ring, reactor-to-reactor and run-to-run temperature calibration.

EpiNet® software

All LayTec in-situ systems are equipped with LayTec software specially developed for process optimization, analysis and control. Our software solutions can control several systems in an MOCVD fab, monitoring all runs simultaneously and supporting operators when making “stop or go” decisions based on Advanced Process Control (APC).

EpiTT for UV-C LEDs

To precisely monitor both AlGaN growth rate and surface morphology during UV-C LED epitaxy, LayTec offers an additional 280 nm and/or 365 nm reflectance channel that employs a UV-C LED as a light source.

EpiTT for various MOCVD reactor types

All products in the EpiTT family (EpiTT, EpiTwin TT, EpiTriple TT) are available for various MOCVD growth systems such as:

  • Systems with satellite rotation

  • Showerhead-like systems

  • Systems with main susceptor rotation speed up to 1500 rpm

  • R&D type and customized MOCVD growth systems

EpiTT for other deposition methods

EpiTT and its related products can be adapted and customized to a variety of deposition processes and reactor designs such as sputtering, physical vapor deposition (PVD) and hydride vapor phase epitaxy (HVPE) and many more. Contact LayTec for discussing your particular application!

Contact

We look forward to hearing from you and will try to answer your questions or respond to your message as best we can. Please use one of the following contact options.

infolaytec.de +49 30 8900550