Power and RF electronics

In-situ power for RF and power electronics.

Applications Metrology solutions Mapping solutions Related products

GaN/Si, GaN/SiC and SiC/SiC based devices and related MOCVD processes currently gain increasing interest due to the rapidly growing power electronics markets. Following this trend, LayTec’s in-situ metrology products offer everything needed for successfully controlling the processes for growing these materials to help our customers to fully exploit the intrinsic advantages offered by wide-bandgap materials and to manufacture competitive devices with high-yield and cost-efficient processes.

  • Reflectance at 3 wavelengths for monitoring of growth rate and morphology (EpiTT and EpiCurve®TT product families)

  • Wafer surface temperature (EpiTT and EpiCurve® TT product families)

  • Wafer curvature for strain management of layer stacks (EpiCurve®TT)

  • Accurate wafer temperature on transparent substrates for power electronics with Pyro 400

  • Improved temperature accuracy even for GaN on silicon by employing Pyro 400

  • Expanded nk database and advanced analysis for GaN/SiC-4H HEMTs

  • EpiNet software allows our tools to reach ±0.5 nm accuracy in real-time AlN film thickness measurement

Name Size
EpiX data sheet 3.32 MB
EpiX GaN-power flyer 1.62 MB
EpiX VCSEL flyer 1.58 MB
Newsletter February 2019 - EpiX modular wafer mapping station 805.16 KB
Talk - How to enhance epitaxy process performance by in-situ data 3.4 MB
Talk - Metrology for UV-LEDs, VCSEL and power electronics 3.26 MB
Talk - Plasma-etch end-pointing in InP-based laser device structures 1.61 MB
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Metrology solutions

EpiCurve® TT allows for precise monitoring of growth rate, surface morphology and susceptor or wafer temperature (depending on the substrate used for the processes). Wafer bow monitoring enables strain management of – among others – AlGaN/AlInGaN structures on silicon carbides. Additionally, LayTec’s Pyro 400 allows for high-precision measurements of the wafer surface temperature for transparent substrate such as sapphire or silicon carbide.

Mapping solutions

EpiX® mapping stations combine an XY-mapping stage with LayTec’s UV-VIS-NIR spectroscopic reflectance and photoluminescence metrology systems for a comprehensive 2D analysis of optical wafer properties by non-contact measurements. The fully automated version (EpiX® C2C) with cassette-to-cassette loading provides a high-throughput solution for industrial production lines. LayTec's EpiX® mapping stations exhibit a superior measurement performance that stands out in absolute accuracy, signal-to-noise level and 2D-homogeneity over the wafer while maintaining short measurement times. For GaN power device wafers, the integrated software provides full automated data analysis, including the analysis of reflectance and photoluminescence spectra to determine the thickness and composition of (Al,Ga)N barriers and the thickness of pGaN layers as well as a total stack thickness measurement. For SiC wafers, in addition the thickness of the SiC substrates themselves can be determined with nm-scale precision.

Contact

We look forward to hearing from you and will try to answer your questions or respond to your message as best we can. Please use one of the following contact options.

infolaytec.de +49 30 8900550