As for all MOCVD processes, LayTec’s EpiCurve^® TT will provide precise information about wafer temperature and wafer bow. The systems and particular the calibration have been adapted in order to account for the higher temperature of SiC deposition. Hereby, the thickness measurements rely on a non-zero difference in optical properties (n,k) at the SiC/substrate interface, which can become very low for homoepitaxial processes. However, lately we developed an algorithm which is able to calculate the entire wafer thickness with a precision of ±2nm. By applying this method before and after epitaxy, e.g. in LayTec’s EpiX^® mapping station, one can determine the thickness of the deposited SiC layer as well as its lateral distribution even in the case of homoepitaxy. Generally, this method could also be applied to other process steps such as thinning and polishing.

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