EpiRAS® TT

EpiRAS® TT is a multipurpose in-situ monitor of epitaxial growth of cubic semiconductors.

Product info Features

EpiRAS® TT is a multipurpose in-situ monitor of epitaxial growth of cubic semiconductors. The system combines two spectroscopic optical techniques: Reflectance Anisotropy Spectroscopy (RAS), sometimes called Reflectance Difference Spectroscopy (RDS), and spectroscopic reflectance (sR), as well as Emissivity Corrected Pyrometry.

  • Growth of cubic semiconductors like III-As and P

  • Development of concentrator solar cells (CPV)

  • R&D for new materials and devices

  • Full spectroscopic wafer selective RAS and reflectance measurements at 280 nm - 800 nm

  • Spectroscopic and time-resolved pseudo 3D color plot

  • True reflectance measurements

  • Wafer-selective growth rate fits

  • Features of EpiTT can be included (EpiRAS® TT)

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EpiRAS data sheet 852.52 KB
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Features

EpiRAS® TT can be adapted to almost any growth system

We have extensive experience with integrating EpiRAS® TT into MOCVD and MBE reactors. Please contact sales@laytec.de for detailed information and suggestions for your specific growth needs.

Contact

We look forward to hearing from you and will try to answer your questions or respond to your message as best we can. Please use one of the following contact options.

infolaytec.de +49 30 8900550